Magnetic reversal of double-layer patterned nanosquares

Journal of Applied Physics

Volumn 97, Issue 8, 2005, Pages

  Zhang, J X ^a   Chen, L Q ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETORESISTIVE RANDOM ACCCESS MEMORY (MRAM) DEVICES; MICROMAGNETIC SIMULATION; PERPENDICULAR MAGNETIC ANISOTROPY (PMA); SWITCHING DYNAMICS;

COMPUTER SIMULATION; DIFFERENTIATION (CALCULUS); FUNCTIONS; GIANT MAGNETORESISTANCE; HYSTERESIS; MAGNETIC FIELD EFFECTS; MATHEMATICAL MODELS; MULTILAYERS; NANOSTRUCTURED MATERIALS;

NANOTECHNOLOGY;

EID: 21444441872     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1866498     Document Type: Article

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