Role of Pb for Ag growth on H-passivated Si(1 0 0) surfaces

Applied Surface Science

Volumn 249, Issue 1-4, 2005, Pages 31-37

  Mathew, S ^a   Satpati, B ^a   Joseph, B ^a   Dev, B N ^a  

^a INSTITUTE OF PHYSICS   (India)

Author keywords

Ag nanoislands on Si; Hydrogen passivation; Rutherford backscattering spectrometry (RBS); Surfactant effect in island size reduction; Transmission electron microscopy (TEM)

Indexed keywords

GROWTH (MATERIALS); NANOSTRUCTURED MATERIALS; PASSIVATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SILVER; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM;

AG NANOISLANDS ON SI; HYDROGEN PASSIVATION; SUBSTRATE CLEANING; SURFACTANT EFFECT IN ISLAND SIZE REDUCTION;

LEAD;

EID: 21344463305     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.11.028     Document Type: Article

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