Model for the strain-induced reflectance-difference spectra of InGaAs/GaAs (001) epitaxial layers

Physica Status Solidi C: Conferences

Volumn , Issue 8, 2003, Pages 2987-2991

  Lastras Martinez A ^a   Balderas Navarro, R E ^a,b   Medel Ruiz, C I ^a   Flores Camacho, J M ^a   Gaona Couto, A ^a   Lastras Martinez L F ^a  

^a INSTITUTO DE INVESTIGACIÓN EN COMUNICACIÓN ÓPTICA   (Mexico)

^b UNIVERSIDAD AUTÓNOMA DE SAN LUIS POTOSÍ   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL THICKNESS; EPILAYER THICKNESS; GROWTH-MODE TRANSITION; QUANTITATIVE INFORMATION; REFLECTANCE DIFFERENCES; SURFACE STOICHIOMETRY; SURFACE-MODIFIED; THEORETICAL MODELS;

EPILAYERS; REFLECTION; SEMICONDUCTING INDIUM; STOICHIOMETRY;

TWO DIMENSIONAL;

EID: 21344450390     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303843     Document Type: Conference Paper

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