Structural defects and electrical conductivity in nanocrystalline SiC:H films doped with boron and grown by photostimulated chemical-vapor deposition

Semiconductors

Volumn 39, Issue 6, 2005, Pages 709-711

  Shevaleevskiy, O I ^a   Myong, S Y ^b   Lim, K S ^b   Miyajima, S ^c   Konagai, M ^c  

^a EMANUEL INSTITUTE OF BIOCHEMICAL PHYSICS   (Russian Federation)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 20944445468     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1944863     Document Type: Article

References (14)

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7. [Semiconductors 36, 38 (2002)].
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11. [Semiconductors 34, 348 (2000)].
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