Magnetization reversal of sub-micron ferromagnetic tunnel junctions in external magnetic fields

Journal of Magnetism and Magnetic Materials

Volumn 240, Issue 1-3, 2002, Pages 305-307

  Klostermann, U K ^a,c   Kinder, R ^a   Bayreuther, G ^a   Ruhrig M ^b   Rupp, G ^b   Wecker, J ^b  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b SIEMENS AG   (Germany)

^c INFINEON TECHNOLOGIES   (United States)

Author keywords

Magnetic tunnel junction; MRAM; Single domain; Stoner Wohlfarth; Sub micrometer

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; MAGNETIC FIELDS; MAGNETIZATION; MAGNETORESISTANCE; TUNNEL JUNCTIONS;

MAGNETIC TUNNEL JUNCTIONS (MTJ);

FERROMAGNETIC MATERIALS;

EID: 0036464831     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-8853(01)00785-5     Document Type: Article

References (8)