Cobalt-polypyrrole-cobalt nanowire field-effect transistors

Applied Physics Letters

Volumn 86, Issue 21, 2005, Pages 1-3

  Chung, Hyun Jong ^a   Jung, Hun Huy ^a   Cho, Yong Sung ^a   Lee, Sungjun ^a   Ha, Jeong Hoon ^a   Choi, Je Hyuk ^a   Kuk, Young ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT; DOPING (ADDITIVES); ELECTROCHEMISTRY; FIELD EFFECT TRANSISTORS; POLYCRYSTALLINE MATERIALS; POLYPYRROLES; TRANSMISSION ELECTRON MICROSCOPY;

ELECTROCHEMICAL SOLUTIONS; HEXAGONAL CLOSEST PACKED STRUCTURES; NANOWIRES; ORGANIC TRANSISTORS;

NANOSTRUCTURED MATERIALS;

EID: 20844463747     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1940125     Document Type: Article

References (17)

1. I. G. Hill, A. Rajagopal, A. Kahn, and Y. Hu, Appl. Phys. Lett. 73, 662 (1998).
2. H. Ishii, K. Sugiyama, E. Ito, and K. Seki, Adv. Mater. (Weinheim, Ger.) 11, 605 (1999)
3. A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai, Nature (London) 424, 654 (2003).
4. P. S. Abthagir and R. Saraswathi, J. Appl. Polym. Sci. 81, 2127 (2001).
5. V. Y. Butko, X. Chi, D. V. Lang, and A. P. Ramirez, Appl. Phys. Lett. 83, 4773 (2003).
6. K. Ramanathan, M. A. Bangar, M. Yun, W. Chen, A. Mulchandani, and N. V. Myung, Nano Lett. 4, 1237 (2004).
7. I. G. Hill, A. Rajagopal, and A. Kahn, J. Appl. Phys. 84, 3236 (1998).
8. A. J. Epstein, F.-C. Hsu, N.-R. Chiou, and V. N. Prigodin, Curr. Appl. Phys. 2, 339 (2002).
9. C.-W. Pan, J.-C. Chou, I-K. Kao, T.-P. Sun, and S.-K. Hsiung, IEEE Sens. J. 3, 164 (2003).
10. J. L. Bŕdas and G. B. Street, Acc. Chem. Res. 18, 309 (1985).
11. V. P. Menon, J. Lei, and C. R. Martin, Chem. Mater. 8, 2382 (1996)
12. J. Duchet, R. Legras, and S. Demoustier-Champagne, Synth. Met. 98, 113 (1998).
13. H. Masuda and K. Fukuda, Science 268, 1466 (1995).
14. K. Nielsch, F. Müller, A.-P. Li, and U. Gösele, Adv. Mater. (Weinheim, Ger.) 12, 582 (2000).
15. The doping level of this device is greater than the as-grown wire because this measurement were performed after five cycles of the postdoping process as described in Fig. 4.
16. Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices (Cambridge University Press, New York, 2001).
17. U. S. Ramelow, J. H. Ma, and R. Darbeau, Mater. Res. Innovations 5, 40 (2001).