Observation of the biexponential ground-state decay time behavior in InAs self-assembled quantum dots grown on misoriented substrates

Applied Physics Letters

Volumn 86, Issue 21, 2005, Pages 1-3

  Shkolnik, A S ^a   Karachinsky, L Ya ^a   Gordeev, N Yu ^a   Zegrya, G G ^a   Evtikhiev, V P ^a   Pellegrini, S ^b   Buller, G S ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b HERIOT WATT UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM COMPOUNDS; SELF ASSEMBLY; SEMICONDUCTOR DEVICES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

INFLUENCE MATERIAL QUALITY; MISORIENTED SUBSTRATES; SELF-ASSEMBLED QUANTUM DOTS; SIZE DISPERSION;

GROUND STATE;

EID: 20844451870     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1938000     Document Type: Article

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