Strain-compensated AlInGaAs-GaAsP superlattices for highly polarized electron emission

Applied Physics Letters

Volumn 86, Issue 17, 2005, Pages 1-3

  Subashiev, A V ^a   Gerchikov, L G ^a   Mamaev, Y A ^a   Yashin, Y P ^a   Roberts, J S ^b   Luh, D A ^c   Maruyama, T ^c   Clendenin, J E ^c  

^a PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

^c SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOEMISSION SPECTRA; STRAIN COMPENSATION; SUPERLATTICE (SL) STRUCTURE; TENSILE STRAINED LAYERS;

ELECTRON EMISSION; ENERGY GAP; LIGHT POLARIZATION; PHOTOCATHODES; PHOTOEMISSION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

SUPERLATTICES;

EID: 20844447871     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1920416     Document Type: Article

References (10)

1. T. Omori, Y. Kurihara, Y. Takeuchi, M. Yoshioka, T. Nakanishi, S. Okumi, M. Tsubata, M. Tavada, K. Togava, Y. Tanimotol, C. Takahashi, T. Baba, and M. Mixuta, Jpn. J. Appl. Phys., Part 1 33, 5676 (1994).
2. T. Saka, T. Kato, T. Nakanishi, S. Okumi, K. Togava, H. Horinaka, T. Matsuyama, and T. Baba, Surf. Sci. 454, 1042 (2000).
3. T. Maruyama, D.-A. Luh, A. Brachmann, J. E. Clendenin, E. L. Garvin, S. Harvey, J. Jiang, R. E. Kirby, C. Y. Prescott, R. Prepost, and A. M. Moy, Appl. Phys. Lett. 85, 2640 (2004).
4. A. D. Andreev and A. V. Subashiev, Physica E (Amsterdam) 13, 556 (2002).
5. A. V. Subashiev, Y. A. Mamaev, B. D. Oskotskii, Y. P. Yashin, and V. K. Kalevich, Semiconductors 33, 1182 (1999).
6. Y. P. Yashin, J. S. Roberts, L. G. Gerchikov, P. A. Houston, A. N. Ipatov, Y. A. Mamaev, A. V. Rochansky, and A. V. Subashiev, in Proceedings of the 11th International Symposium on Nanostructures: Physics and Technology" (NANO2003), 23-28 June 2003, St. Petersburg (2003), p. 61.
7. E. Kasper and F. Schäffler, in Strained-Layer Superlattices: Materials Science and Technology, Semiconductors and Metals Vol. 33, edited by, T. P. Pearsall, (Academic, New York, 1991), p. 241f.
8. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001).
9. R. P. Green, A. Krysa, J. S. Roberts, D. G. Revin, L. R. Wilson, E. A. Zibik, W. H. Ng, and J. W. Cockburn, Appl. Phys. Lett. 83, 1921 (2003).
10. A. V. Subashiev, L. G. Gerchikov, and A. N. Ipatov, J. Appl. Phys. 96, 1511 (2004).