Effects of heavy p doping on the polarized emission spectra and low-temperature luminescence spectra of GaAs/GaAsP strained-layer structures

Semiconductors

Volumn 33, Issue 11, 1999, Pages 1182-1187

  Subashiev, A V ^a   Mamaev, Yu A ^a   Oskotskii B D ^a   Yashin, Yu P ^a   Kalevich, V K ^b  

^a PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033229376     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187845     Document Type: Article

References (24)

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