Postannealing of magnetic tunnel junctions with ion-bombardment-modified exchange bias

Applied Physics Letters

Volumn 86, Issue 15, 2005, Pages 1-3

  Hoink V ^a   Sacher, M D ^a   Schmalhorst, J ^a   Reiss, G ^a   Engel, D ^b   Junk, D ^b   Ehresmann, A ^b  

^a BIELEFELD UNIVERSITY   (Germany)

^b Rheinland Pfälzische Technische Universität Kaiserslautern Landau   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON TRANSPORT PROPERTIES; HELIUM; ION BOMBARDMENT; MAGNETIC ANISOTROPY; MAGNETIZATION; MAGNETORESISTANCE; REMANENCE;

EXCHANGE BIAS; MAGNETIC TUNNEL JUNCTIONS; TUNNELING MAGNETORESISTANCE (TMR); UNIDIRECTIONAL ANISOTROPY;

TUNNEL JUNCTIONS;

EID: 20844445077     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1899771     Document Type: Article

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