Influence of ion bombardment on transport properties and exchange bias in magnetic tunnel junctions

Journal of Applied Physics

Volumn 94, Issue 9, 2003, Pages 5556-5558

  Schmalhorst, J ^a   Hoink V ^a   Reiss, G ^a   Engel, D ^b   Junk, D ^b   Schindler, A ^b   Ehresmann, A ^b   Schmoranzer, H ^b  

^a BIELEFELD UNIVERSITY   (Germany)

^b University of Koblenz Landau   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ION BOMBARDMENT; KERR MAGNETOOPTICAL EFFECT; MAGNETIC FIELD EFFECTS; MAGNETIC MATERIALS; MAGNETORESISTANCE; MAGNETRON SPUTTERING; MONTE CARLO METHODS; TRANSPORT PROPERTIES;

EXCHANGE BIAS; TUNNELING BARRIERS;

TUNNEL JUNCTIONS;

EID: 0242552141     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1614846     Document Type: Article

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10. 2, distance 0.5 mm). Before bombardment, one half of each square is patterned (reference junctions). Subsequently, each square is irradiated with a specific ion dose. Finally, the other half of each square is patterned to produce the junctions with ion bombardment manipulated exchange bias.
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