Peculiarities in the morphology of Ge island array on Si(100) at a subcritical thickness of the deposited Ge layer

Technical Physics Letters

Volumn 30, Issue 11, 2004, Pages 920-923

  Dubrovskii V G ^a   Tonkikh, A A ^a   Cirlin, G E ^b   Ustinov, V M ^a   Werner, P ^c  

^a INSTITUTE FOR ANALYTICAL INSTRUMENTATION   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 20644467033     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1829343     Document Type: Article

References (12)

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