Temperature dependence of the quantum dot lateral size in the GE/Si(100) system

Physica Status Solidi (B) Basic Research

Volumn 236, Issue 1, 2003, Pages

  Tonkikh, A A ^a,b   Dubrovskii, V G ^a   Cirlin, G E ^a   Egorov, V A ^a   Ustinov, V M ^a   Werner, P ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037346799     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200301758     Document Type: Article

References (7)

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2. O. P. Pchelyakov et al., Semiconductors 34, 1229 (2000).
3. V. G. Dubrovskii, G. E. Cirlin, and V. M. Ustinov, Phys. Rev. B (submitted).
4. P. Müller and R. Kern, Appl. Surf. Sci. 102, 6 (1996).
5. C. Ratsh and A. Zangwill, Surf. Sci. 293, 123 (1993).
6. A. V. Osipov, F. Schmitt, S. A. Kukushkin, and P. Hess, Appl. Surf. Sci. 188, 156 (2002).
7. G. E. Cirlin, V. A. Egorov, L. V. Sokolov, and P. Werner, Semiconductors 36, 1294 (2002).