Film properties and surface profile after gap fill of electrochemically deposited Cu films by DC and pulse reverse processes

Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000

Volumn , Issue , 2000, Pages 182-184

  Hsieh, C H ^a   Chou, S W ^a   Shue, S L ^a   Yu, C H ^a   Liang, M S ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; ELECTROCHEMICAL SENSORS; ELECTRODEPOSITION; METALLIC FILMS; REDUCTION;

ADDITIVE ADSORPTION; ADDITIVE DIFFUSIONS; ELECTROCHEMICAL DEPOSITION; FILM PROPERTIES; REVERSE PROCESS; SELF-ANNEALING; SURFACE PROFILES; SURFACE REFLECTIVITY;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 20644444881     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2000.854319     Document Type: Conference Paper

References (7)

1. D. Edelstein et al, Technical Digest, IEEE IEDM, 1997, p 773.
2. S. Venkatesan et al, Technical Digest, IEEE IEDM, 1997, p 769.
3. P. C. Andricacos, C. Uzoh, J. O. Dukovic, J. Horkans, and H. Deligianni, IBM J. Res. Develop, Vol. 42, 1998, p 567.
4. C.-K. Hu and J. M. E. Harper, Materials Chem. Phys., Vol. 52, 1998, p 5.
5. T. Ritzdorf, L. Chen, D. Fulton, and C. Dundas, Proceedings of IITC, IEEE, 1999, p 287.
6. J. Reid et al, Proceedings of IITC, IEEE, 1999, p 284.
7. W. J. Tsai, S. L. Shue, C. H. Yu, and M. S. Liang, unpublished.