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Volumn 152, Issue 2, 2005, Pages 178-182

Realising high-current gain p-n-p transistors using a novel surface accumulation layer transistor (SALTran) concept

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; LIGHT AMPLIFIERS; OPTIMIZATION; SEMICONDUCTOR MATERIALS; VLSI CIRCUITS;

EID: 20444501398     PISSN: 13502409     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-cds:20045015     Document Type: Conference Paper
Times cited : (3)

References (11)
  • 3
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    • Moiseiwitsch, N. E., and Ashburn, P.: 'The benefits of fluorine in pnp polysilicon emitter bipolar transistors', IEEE Trans. Electron Devices, 1994, 41, pp. 1249-1256
    • (1994) IEEE Trans. Electron Devices , vol.41 , pp. 1249-1256
    • Moiseiwitsch, N.E.1    Ashburn, P.2
  • 4
    • 0016236280 scopus 로고
    • Novel bipolar device with low emitter impurity concentration structure
    • December
    • Yagi, H., Tsuyuki, T., Koma, K., and Miyazawa, Y.: 'Novel bipolar device with low emitter impurity concentration structure'. IEDM Tech. Digest, December 1974, pp. 262-265
    • (1974) IEDM Tech. Digest , pp. 262-265
    • Yagi, H.1    Tsuyuki, T.2    Koma, K.3    Miyazawa, Y.4
  • 5
    • 0027685282 scopus 로고
    • High-low polysilicon emitter SiGe base bipolar transistors
    • Crabbe, E.F. et al.: 'High-low polysilicon emitter SiGe base bipolar transistors', IEEE Electron Device Lett., 1993, 14, pp. 478-480
    • (1993) IEEE Electron Device Lett. , vol.14 , pp. 478-480
    • Crabbe, E.F.1
  • 6
    • 0029209362 scopus 로고
    • A high-low emitter bipolar power transistor
    • Ang, S.S.: 'A high-low emitter bipolar power transistor', Microelectron. J., 1995, 26, pp. 1-7
    • (1995) Microelectron. J. , vol.26 , pp. 1-7
    • Ang, S.S.1
  • 7
    • 0027675868 scopus 로고
    • A novel PHL-emitter bipolar transistor - Fabrication and characterization
    • Chang, K.Z., and Wu, C.Y.: 'A novel PHL-emitter bipolar transistor - fabrication and characterization', Solid-State Electron., 1993, 36, pp. 1393-1399
    • (1993) Solid-state Electron. , vol.36 , pp. 1393-1399
    • Chang, K.Z.1    Wu, C.Y.2
  • 9
    • 0027803922 scopus 로고
    • A self-aligned lateral bipolar transistor realized on SIMOX material
    • Edholm, B., Olsson, J., and Soderbarg, A.: 'A self-aligned lateral bipolar transistor realized on SIMOX material', IEEE Trans. Electron Devices, 1993, 40, pp. 2359-2360
    • (1993) IEEE Trans. Electron Devices , vol.40 , pp. 2359-2360
    • Edholm, B.1    Olsson, J.2    Soderbarg, A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.