Characterisation of NPN and PNP SiGe heterojunction bipolar transistors formed by Ge+ implantation

Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO

Volumn , Issue , 1999, Pages 254-259

  Mitchell, M ^a   Nigrin, S ^a   Cristiano, F ^a   Ashburn, P ^a   Hemment, P ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; DIFFUSION IN SOLIDS; ELECTRIC CURRENTS; ELECTRIC VARIABLES MEASUREMENT; ELECTROMAGNETIC WAVE POLARIZATION; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

GERMANIUM IMPLANTATION; SILICON GERMANIUM; TRANSFER ELECTROMAGNETIC MODE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033315855     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)