Formation of ferroelectric thin films on ruthenium electrodes

Integrated Ferroelectrics

Volumn 39, Issue 1-4, 2001, Pages 169-177

  Sato, Takehiko ^a,b   Sugahara, Kazuyuki ^a,b   Kijima, Takeshi ^a,b   Ishiwara, Hiroshi ^b  

^a R and D Associations for Future Electron Devices   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Bismuth titanate; Ferroelectric thin films; Ruthenium electrode; Sol gel method; Strontium bismuth tantlate

Indexed keywords

BI COMPOSITION; BISMUTH TITANATE; RUTHENIUM ELECTRODE; STRONTIUM BISMUTH TANTLATE;

ANNEALING; CRYSTALLIZATION; ELECTRODES; HYSTERESIS; RUTHENIUM; SENSITIVITY ANALYSIS; SOL-GEL PROCESS;

FERROELECTRIC THIN FILMS;

EID: 33751174196     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580108011940     Document Type: Conference Paper

References (2)

1. th Int.Symp. Integrated Ferroelectrics (1997)55i
2. A.Yuuki, M.Yamamuka, T.Makita, T.Horikawa, T.Shibano, N.Hirano, H.Maeda, N.Mikami, K.Ono, H.Ogata and H.Aabe: Dig.Int.Electron Devices Meeting, Washington D.C., 1995 (IEEE, NewYork,1995) p.115