An improved three-state master equation model for capacitively coupled single-electron transistor

Proceedings of the IEEE Conference on Nanotechnology

Volumn 2002-January, Issue , 2002, Pages 483-486

  Hu, C H ^a   Jiang, J F ^a   Cai, Q Y ^a  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

Capacitance; Circuit simulation; Coupling circuits; Differential equations; Numerical simulation; Single electron devices; Single electron transistors; SPICE; Steady state; Voltage

Indexed keywords

CAPACITANCE; CAPACITANCE MEASUREMENT; CIRCUIT SIMULATION; COMPUTER SIMULATION; COUPLED CIRCUITS; DIFFERENTIAL EQUATIONS; ELECTRIC POTENTIAL; ELECTRON DEVICES; ELECTRONS; EQUATIONS OF STATE; FIELD EFFECT TRANSISTORS; MONTE CARLO METHODS; NANOTECHNOLOGY; NUMERICAL METHODS; NUMERICAL MODELS; SPICE; TRANSIENTS;

CAPACITIVELY COUPLED; DEVICE PARAMETERS; MASTER EQUATION METHOD; MASTER EQUATION MODELING; MASTER EQUATIONS; SINGLE-ELECTRON DEVICES; STEADY STATE; STEADY-STATE MODELING;

SINGLE ELECTRON TRANSISTORS;

EID: 20344407457     PISSN: 19449399     EISSN: 19449380     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2002.1032293     Document Type: Conference Paper

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