TCAD modeling of ion beam induced charge collection in silicon Schottky barrier devices

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 210, Issue , 2003, Pages 181-185

  Hearne, Sean M ^a   Jamieson, David N ^a   Yang, Changyi ^a   Dzurak, Andrew S ^b  

^a UNIVERSITY OF MELBOURNE   (Australia)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

Charge collection efficiency; IBIC; Interface trapped charge; MOS; Numerical simulation; TCAD

Indexed keywords

AMORPHOUS SILICON; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRIC CHARGE; ELECTRIC FIELDS; MOS DEVICES;

INDUCED CHARGE COLLECTION;

ION BEAMS;

EID: 0042476332     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)01057-7     Document Type: Conference Paper

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