Near-field optical mapping of the ion-implanted patterns fabricated in amorphous silicon carbide

Vacuum

Volumn 79, Issue 1-2, 2005, Pages 94-99

  Tsvetkova, T ^a   Takahashi, S ^b   Zayats, A ^b   Dawson, P ^b   Turner, R ^b   Bischoff, L ^c   Angelov, O ^d   Dimova Malinovska, D ^d  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^d Central Laboratory of Solar Energy and New Energy Sources   (Bulgaria)

Author keywords

Amorphous silicon carbide (a SiC:H); Focused ion beams (FIB); High density optical data storage; Scanning near field optical microscopy (SNOM)

Indexed keywords

AMORPHOUS MATERIALS; ATOMIC FORCE MICROSCOPY; ION BEAMS; ION IMPLANTATION; IONS; MAGNETRON SPUTTERING; NEAR FIELD SCANNING OPTICAL MICROSCOPY; OPTICAL DATA STORAGE; PATTERN RECOGNITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON WAFERS;

AMORPHOUS SILICON CARBIDE (A-SIC:H); CHEMICAL INERTNESS; FOCUSED ION BEAMS (FIB); HIGH DENSITY OPTICAL DATA STORAGE; OPTICAL CONTRAST MODULATION;

SILICON CARBIDE;

EID: 20344367555     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2005.02.002     Document Type: Article

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