Structure properties of MgxZn1-xO films deposited at low temperature

Chinese Physics Letters

Volumn 22, Issue 4, 2005, Pages 995-997

  Zhang, Xi Jian ^a   Ma, Hong Lei ^a   Wang, Qing Pu ^a   Ma, Jin ^a   Zong, Fu Jian ^a   Xiao, Hong Di ^a   Ji, Feng ^a  

^a SHANDONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; II-VI SEMICONDUCTORS; MAGNETRON SPUTTERING; RAMAN SCATTERING; SEMICONDUCTOR ALLOYS; SUBSTRATES; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC ALLOYS; ZINC OXIDE; ZINC SULFIDE;

HEXAGONAL WURTZITE; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LOWS-TEMPERATURES; PHASE A; PREFERRED ORIENTATIONS; RADIO-FREQUENCY-MAGNETRON SPUTTERING; SILICON SUBSTRATES; SINGLE-PHASE STRUCTURE; STRUCTURE PROPERTY; X-RAY PHOTOELECTRONS;

TEMPERATURE;

EID: 20344365436     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/22/4/060     Document Type: Article

References (11)

1. Xiang W H et al 2003 Chin. Phys. Lett. 20 296
2. Sharma A K et al 1999 Appl. Phys. Lett. 76 3327
3. Chen Y F et al 1998 J. Appl. Phys. 84 3917
4. Liu D F et al 2003 Chin. Phys. Lett. 20 928
5. Bagnall D M et al 1997 Appl. Phys. Lett. 70 2230
6. Ohtomo A et al 1998 Appl. Phys. Lett. 72 2466
7. Ohtomo A et al 2000 Appl. Phys. Lett. 77 2204
8. Zhao D X et al 2002 J. Cryst. Growth 234 427
9. Park W I, Yi G C and Jang H M 2001 Appl. Phys. Lett. 79 2022
10. Chen Y F et al 2004 Micron 35 481
11. Zeng J N et al 2002 Appl. Surf. Sci. 197-198 362