Charging and intrinsic-leakage current peaks in thin silicon-dioxide films

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1997, Pages 147-148

  Yamada, Ren ichi ^a   Yugami, Jiro ^a   Ohkura, Makoto ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TUNNELING; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MATHEMATICAL MODELS; MOS DEVICES; RANDOM ACCESS STORAGE; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICA;

FLASH MEMORIES;

THIN FILMS;

EID: 0030681627     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/vlsit.1997.623741     Document Type: Conference Paper

References (3)