AlGaN materials for semiconductor sensors and emitters in 200-365 nm range

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5617, Issue , 2004, Pages 424-428

  Usikov, Alexander S ^a   Shapvalova, Elizaveta V ^a   Melnik, Yuri V ^a   Ivantsov, Vladimir A ^a   Dmitriev, Vladimir A ^a   Collins, Charles J ^b   Sampath, Anand V ^b   Garrett, Gregory A ^b   Shen, Paul ^b   Wraback, Michael ^b  

^a Technologies and Devices International Inc   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

AlGaN layers; AlN layers; GaN layers; Hydride vapor phase epitaxy; UV transmission

Indexed keywords

ALGAN LAYERS; ALN LAYERS; GAN LAYERS; HYDRIDE VAPOR PHASE EPITAXY (HVPE); ULTRA-VIOLET (UV) TRANSMISSION;

ATOMIC FORCE MICROSCOPY; CONCENTRATION (PROCESS); LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SENSORS; SURFACE ROUGHNESS; VAPOR PHASE EPITAXY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 20244373036     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.578452     Document Type: Conference Paper

References (4)

1. A.P. Zhang et al., Appl. Phys. Lett. 79, 1555 (2001).
2. J.R. LaRoche et al., Solid State Electron 48, 193 (2003).
3. M. Kuramoto et al., Jpn. J. Appl. Phys. Vol. 40, L925 (2001).
4. A. S. Usikov, et al Proceedings of the 5th International Conference on Nitride Semiconductors (ICNS-5), Nara, Colorado, Japan, 16-20 May 2003, phys. stat. sol. (c) 0, 2265 (2003).