InGaAs/InGaP quantum dots and nanopillar structures for infrared focal plane array applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5563, Issue , 2004, Pages 74-87

  Tsao, Stanley ^a   Gin, Aaron ^a   Mi, Kan ^a   Szafraniec, John ^a   Zhang, Wei ^a   Lim, Hochul ^a   O'Sullivan, Thomas ^a   Jiang, Jutao ^a   Razeghi, Manijeh ^a   Brown, Gail J ^b   Tidrow, Meimei Z ^c  

^a Northwestern University   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c ARMED FORCES INSTITUTE OF PATHOLOGY   (United States)

Author keywords

Detectivity; Focal plane array; GaAs; GaInAs; GaInP; Nanopillars; Quantum dot infrared photodetector; Self assembly

Indexed keywords

DETECTIVITY; FOCAL PLANE ARRAY; GAINAS; GAINP; NANOPILLARS; QUANTUM DOTS INFRARED PHOTODETECTORS;

FLIP CHIP DEVICES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; PHOTODETECTORS; PHOTOLUMINESCENCE; POWER INTEGRATED CIRCUITS; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TEMPERATURE DISTRIBUTION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 20144386254     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.565667     Document Type: Conference Paper

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