Conductivity of silicon inversion layers: Comparison with and without an in-plane magnetic field

Physical Review B - Condensed Matter and Materials Physics

Volumn 71, Issue 11, 2005, Pages

  Tsui, Yeekin ^a   Vitkalov, S A ^a   Sarachik, M P ^a   Klapwijk, T M ^b  

^a CITY COLLEGE OF NEW YORK   (United States)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

ANALYTIC METHOD; ARTICLE; COMPARATIVE STUDY; ELECTRIC CONDUCTIVITY; ELECTRON; MAGNETIC FIELD; NONPHOTOCHEMICAL QUENCHING; QUANTITATIVE ANALYSIS; TEMPERATURE DEPENDENCE; THEORETICAL MODEL;

EID: 20144384510     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.71.113308     Document Type: Article

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