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Applied Surface Science

Volumn 102, Issue , 1996, Pages 147-150

Properties of semiconducting rhenium silicide thin films grown epitaxially on silicon (111)

(3) Ali, I a,b Muret, P a Nguyen Tan, T A a

a LABORATOIRE DE CRISTALLOGRAPHIE (France)

b HIGHER INSTITUTE FOR APPLIED SCIENCES AND TECHNOLOGY (Syrian Arab Republic)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL IMPURITIES; ELECTRIC CONDUCTIVITY MEASUREMENT; ENERGY GAP; EPITAXIAL GROWTH; RHENIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SPECTRUM ANALYSIS; SUBSTRATES; THIN FILMS;

ABSORPTION COEFFICIENT PREFACTOR; ELECTRICALLY ACTIVE IMPURITIES; HYDROGEN PARTIAL PRESSURE; IMPURITY BAND; OPTICAL SPECTRUM;

SEMICONDUCTING FILMS;

EID: 0030564908 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/0169-4332(96)00035-9 Document Type: Article

Times cited : (10)

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