Achieving CDU requirement for 90nm technology node and beyond with advanced mask making process technology

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5645, Issue , 2005, Pages 100-108

  Tzu, San De ^a   Chang, Chung Hsing ^a   Chen, Wen Chi ^a   Kliem, Karl Heinz ^b   Hudek, Peter ^b   Beyer, Dirk ^b  

^a Tai Po Industrial Estate Ctr   (Hong Kong)

^b Vistec Electron Beam GmbH   (Germany)

Author keywords

CD uniformity; CDU; Fogging effect; Global; Local; Proximity effect

Indexed keywords

COMPUTER SIMULATION; COMPUTER SOFTWARE; DENSITY (OPTICAL); ELECTRIC POTENTIAL; ELECTRON BEAMS; ELECTRON SCATTERING; MASKS; OPTICAL RESOLVING POWER; SCANNING;

CD UNIFORMITY; CDU; FOGGING EFFECTS; GLOBAL; LOCAL; PROXIMITY EFFECTS;

PHOTOLITHOGRAPHY;

EID: 20044370668     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.577008     Document Type: Conference Paper

References (5)

1. T. H. P. Chang, J. Vac. Sci. Technol., "Proximity effect in electron beam lithography", vol. 12, No. 6, Nov./Dec. (1975) 1271.
2. PROX-In "Input parameter determination for PEC and FEC", Software Document Description, Leica Microsystems Lithography GmbH, 2004 (Unpublished).
3. N. Belic, R. Jaritz, P. Hudek, H. Eisenmann, "Efficient e-beam proximity correction for high accelerating voltage", Proc of mask patterning for the 100nm technology node" SEMICON Europa 2002, SEMT Presents.
4. E.S. Park, J.H. Lee, D.I. Park, W.G. Jeong, S.K Seo, J.M. Kim, Sang-Soo Choi, Soo-Hong Jeong, "Optimum PEC conditions under resist heating effect reduction for 90nm node mask writing", SPIE-BACUS 2002, Proc. SPIE 4889 (2002) Part Two, 792-799.
5. D. Beyer, D. Löffelmacher, G. Goedel, P. Hudek, B. Schnabel, T. Elster, "Tool and process optimization for 100nm maskmaking using a 50kV variable shaped e-beam system", Proc. SPIE 4562 (2002) 88.