Methylsilane on Cu(1 1 1), a STM study of the (√3×√3) R30°-Cu2Si surface silicide

Surface Science

Volumn 585, Issue 1-2, 2005, Pages 47-52

  Ménard, Hervé ^a   Horn, Andrew B ^b   Tear, Steven P ^a  

^a UNIVERSITY OF YORK   (United Kingdom)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

Compound formation; Copper; Low index single crystal surfaces; Scanning tunnelling microscopy; Silicides; Surface structure, morphology, roughness, and topography

Indexed keywords

ADSORPTION; CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SILANES; SINGLE CRYSTALS; SURFACE STRUCTURE; SURFACE TOPOGRAPHY; SURFACES;

ATOMIC-LEVEL INTERACTIONS; COMPOUND FORMATION; LOW INDEX SINGLE CRYSTAL SURFACES; SURFACE SILICIDE;

SURFACE CHEMISTRY;

EID: 20044368087     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2005.04.008     Document Type: Article

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