Scanning tunneling microscopy study of the initial stages of growth of Cu/Si(111): The formation and thermal evolution of the quasi-"5x5" incommensurate structure

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 3, 1997, Pages 1531-1536

  Slmão, Renata A ^a   Achete, C A ^a   Nlehus, H ^b  

^a FEDERAL UNIVERSITY OF RIO DE JANEIRO   (Brazil)

^b HUMBOLDT UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

2-D CRYSTALS; ATOMIC RESOLUTION; EMPTYSTATE; INCOMMENSURATE STRUCTURE; INITIAL STAGES; LATTICE PARAMETERS; LAYER BY LAYER; ROOM TEMPERATURE; SCANNING TUNNELING MICROSCOPY (STM); SECOND LAYER; SI (1 1 1); SI(111) SUBSTRATE; SI(111)-7X7; SI-SI BONDS; SILICON ATOMS; STEP EDGE; THERMAL EVOLUTION; THERMAL-ANNEALING; THREE DIMENSIONAL (3D) CRYSTALS;

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; CRYSTALS; DEFECTS; DISLOCATIONS (CRYSTALS); ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; POINT DEFECTS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SOIL CONSERVATION; THREE DIMENSIONAL;

CRYSTAL ATOMIC STRUCTURE;

EID: 34547788614     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580625     Document Type: Article

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