High power and linearity performances of gallium nitride HEMT devices on sapphire substrate

Electronics Letters

Volumn 41, Issue 1, 2005, Pages 46-47

  Werquin, M ^a   Gaquiere C ^a   Guhel, Y ^b   Vellas, N ^a   Theron, D ^a   Boudart, B ^b   Hoel, V ^a   Germain, M ^c   De Jaeger, J C ^a   Delage, S ^d  

^a INSTITUT D ELECTRONIQUE   (France)

^b Université de Caen Normandie   (France)

^c IMEC   (Belgium)

^d Domaine de Corbeville   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC POTENTIAL; GALLIUM NITRIDE; INTERMODULATION; SAPPHIRE; SUBSTRATES;

BIAS VOLTAGE; INTERMODULATION RATIO (IMR); LINEAR COMPONENTS; POWER GAIN;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 19944433588     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20056735     Document Type: Article

References (7)

1. Wu, Y.F., Saxler, A., Moore, M., Smith, R.P., Sheppard, S., Chavarkar, T., Wisleder, T., Mishra, U.K., and Parikh, P.: '30-W/mm GaN HEMTs by field plate optimization', IEEE Electron. Device Lett., 2004, 25, (3), pp. 117-119
2. Chini, A., Buttari, D., Coffie, R., Heikman, S., Keller, S., and Mishra, U.K.: '12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate', Electron. Lett., 2004, 40, (1), pp. 73-74
3. Gaquiére, C., Bue, F., Delemotte, P., and Crosnier, Y.: 'Intermodulation load pull measurement in the 26-40 GHz bandwith'. European Microwave Week, Paris, France, October 2000
4. Hoel, V., Guhel, Y., Boudart, B., Gaquiére, C., De Jaeger, J.C., Lahréche, P., and Gibart, P.: 'Static measurements of GaN MESFETs on (111) Si substrate', Electron. Lett., 2001, 37, pp. 1095-1096
5. Vellas, N., Gaquiére, C., Bue, F., Guhel, Y., Boudart, B., De Jaeger, J.C., and Poisson, M.A.: 'Load impedance influence on the ID(VDS) characteristics of AlGaN/GaN HEMTs in large signal regime at 4 GHz', IEEE Electron Device Lett., 2002, 23, (5), pp. 246-248
6. Bue, F., Gaquiére, C., Crosnier, Y., Carnez, B., and Quentin, P.: 'A 26-40 GHz on wafer intermodulation measurement system', European Microwave Week, Munich, Germany, October 1999
7. Chu, S.L.G., Huang, J., Stmble, W., Jackson, G., Pan, N., Schindler, M.J., and Tajima, Y.: 'A highly linear MESFET', IEEE MTT-S Dig., 1991, 2, pp. 725-728