Diode-pumped passively mode-locked Nd: YVO4 lasers with 40-GHz repetition rate

IEEE Journal of Quantum Electronics

Volumn 41, Issue 1, 2005, Pages 45-52

  Lecomte, Steve ^a   Kalisch, Markus ^a   Krainer, Lukas ^a   Spühler, Gabriel J ^a   Paschotta, Rüdiger ^a   Golling, Matthias ^a   Ebling, Dirk ^a   Ohgoh, Tsuyoshi ^b   Hayakawa, Toshiro ^b   Pawlik, Susanne ^c   Schmidt, Berthold ^c   Keller, Ursula ^a  

^a ETH ZURICH   (Switzerland)

^b FUJIFILM CORPORATION   (Japan)

^c Bookham Switzerland AG   (Switzerland)

Author keywords

Diode pumped lasers; High pulse repetition rates; Mode locked lasers; Semiconductor absorbers

Indexed keywords

LASER MODE LOCKING; LASER PULSES; NEODYMIUM LASERS; PUMPING (LASER); SEMICONDUCTOR LASERS;

DIODE-PUMPED LASERS; HIGH-PULSE REPETITION RATES; SEMICONDUCTOR ABSORBERS;

SOLID STATE LASERS;

EID: 19944432466     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2004.838532     Document Type: Article

References (34)

1. U. Keller, "Recent developments in compact ultrafast lasers," Nature, vol. 424, pp. 831-838, 2003.
2. R. Ramaswami and K. Sivarajan, Optical Networks: A Practical Perspective. San Mateo, CA: Morgan Kaufmann, 1998.
3. D. A. B. Miller, "Optical Interconnects to Silicon," IEEE J. Sel. Topics Quantum Electron., vol. 6, no. 6, pp. 1312-1317, Nov.-Dec. 2000.
4. K. J. Weingarten, M. J. W. Rodwell, and D. M. Bloom, "Picosecond optical sampling of GaAs integrated circuits," IEEE J. Quantum Electron., vol. 24, no. 2, pp. 198-220, Feb. 1988.
5. A. Bartels, T. Dekorsky, and H. Kurz, "Femtosecond Ti:sapphire ring laser with 2-GHz repetition rate and its application in time-resolved spectroscopy," Opt. Lett., vol. 24, pp. 996-998, 1999.
6. A. Hatziefremidis, D. N. Papadopoulos, D. Fraser, and H. Avramopoulos, "Laser sources for polarized electron beams in cw and pulsed accelerators," Nucl. Instrum. Meth. A, vol. 431, pp. 46-51, 1999.
7. S. Lecomte, L. Krainer, R. Paschotta, M. J. P. Dymott, K. J. Weingarten, and U. Keller, "Optical parametric oscillator with 10-GHz repetition rate and 100-mW average output power in the spectral region near 1.5 μm," Opt. Lett., vol. 27, pp. 1714-1716, 2002.
8. S. Lecomte, R. Paschotta, M. Golling, D. Ebling, and U. Keller, "Synchronously pumped optical parametric oscillators in the 1.5-μ m spectral region with a repetition rate of 10 GHz," J. Opt. Soc. Amer. B, vol. 21, pp. 844-850, 2004.
9. 4 laser with 0.5-W average output power and low timing jitter," Opt. Lett., vol. 29, pp. 2629-2631, 2004.
10. E. Yoshida and M. Nakazawa, "80-200 GHz erbium doped fiber laser using a rational harmonic mode-locking technique," Electron. Lett., vol. 32, pp. 1370-1372, 1996.
11. S. Arahira, Y. Matsui, and Y. Ogawa, "Mode-locking at very high repetition rates more than terahertz in passively mode-locked distributed-Bragg-reflector laser diodes," IEEE J. Quantum Electron. vol. 32, no. 7, pp. 1211-1224, Jul. 1996.
12. U. Keller, D. A. B. Miller, G. D. Boyd, T. H. Chiu, J. F. Ferguson, and M. T. Asom, "Solid-state low-loss intracavity saturable absorber for Nd:YLF lasers: An antiresonant semiconductor Fabry-Perot saturable absorber," Opt. Lett., vol. 17, pp. 505-507, 1992.
13. U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, "Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers," IEEE J. Sel. Topics Quantum Electron., vol. 2, no. 3, pp. 435-453, Sep. 1996.
14. R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, and U. Keller, "High-Power passively mode-locked semiconductor lasers," IEEE J. Quantum Electron., vol. 38, no. 9, pp. 1268-1275, Sep. 2002.
15. S. Hoogland, S. Dhanjal, A. C. Tropper, S. J. Roberts, R. Häring, R. Paschotta, and U. Keller, "Passively mode-locked diode-pumped surface-emitting semiconductor laser," IEEE Photon. Technol. Lett. vol. 12, no. 9, pp. 1135-1137, Sep. 2000.
16. A. Garnache, S. Hoogland, A. C. Tropper, I. Sagnes, G. Saint-Girons, and J. S. Roberts, "<500-fs soliton pulse in a passively mode-locked broadband surface-emitting laser with 100-mW average power," Appl. Phys. Lett., vol. 80, pp. 3892-3894, 2002.
17. A. Aschwanden, D. Lorenser, H. J. Unold, R. Paschotta, E. Gini, and U. Keller, "10-GHz passively mode-locked surface-emitting semiconductor laser with 1.4 W output power," presented at the Conf. Lasers and Electro-Optics (CLEO), (OSA), Postdeadline CPDB8, 2004.
18. 4 lasers with pulse repetition rates up to 160 GHz," IEEE J. Quantum Electron., vol. 38, no. 10, pp. 1331-1338, Oct. 2002.
19. 4 laser with up to 13 GHz repetition rate," Appl. Phys. B, vol. 69, pp. 245-247, 1999.
20. S. C. Zeller, L. Krainer, G. J. Spühler, R. Paschotta, M. Golling, D. Ebling, K. J. Weingarten, and U. Keller, "Passively mode-locked 50-GHz Er: Yb: glass laser," Electron. Lett., vol. 40, pp. 875-876, 2004.
21. K. J. Weingarten, D. C. Shannon, R. W. Wallace, and U. Keller, "Two gigahertz repetition rate, diode-pumped, mode-locked, Nd: yttrium lithium fluoride (YLF) laser," Opt. Lett., vol. 15, pp. 962-964, 1990.
22. K. J. Weingarten, A. A. Godil, and M. Gifford, "FM modelocking at 2.85 GHz using a microwave resonant optical modulator," IEEE Photon. Technol. Lett., vol. 4, no. 10, pp. 1106-1109, Oct. 1992.
23. P. A. Schulz and S. R. Henion, "5-GHz mode locking of a Nd: YLF laser," Opt. Lett., vol. 16, pp. 1502-1504, 1991.
24. A. A. Godil, A. S. Hou, B. A. Auld, and D. M. Bloom, "Harmonic mode locking of a Nd: BEL laser using a 20-GHz dielectric resonator/optical modulator," Opt. Lett., vol. 16, pp. 1765-1767, 1991.
25. L. Krainer, R. Paschotta, M. Moser, and U. Keller, "Passively modelocked picosecond lasers with up to 59 GHz repetition rate," Appl. Phys. Lett., vol. 77, pp. 2104-2105, 2000.
26. 4 laser," Electron. Lett., vol. 36, pp. 1846-1848, 2000.
27. C. Hönninger, R. Paschotta, F. Morier-Genoud, M. Moser, and U. Keller, "Q-switching stability limits of continuous-wave passive mode locking," J. Opt. Soc. Am. B, vol. 16, pp. 46-56, 1999.
28. A. Oosenbrug, "Reliability aspects of 980-nm pump lasers in EDFA applications," Proc. SPIE, vol. 3284, pp. 20-27, 1998.
29. B. Braun, K. J. Weingarten, F. X. Kärtner, and U. Keller, "Continuous-wave mode-locked solid-state lasers with enhanced spatial hole-burning, Part I: Experiments," Appl. Phys. B, vol. 61, pp. 429-437, 1995.
30. F. Yamanaka, M. Wada, T. Kuniyasu, T. Ohgoh, T. Fukunaga, and T. Hayakawa, "2 W reliable operation in 50 μm-wide InGaAsP/InGaP /A1-GaAs (lambda = 810 nm) SQW diode lasers with tensile-strained InGaP barriers" Electron. Lett., vol. 37, pp. 1289-1290, 2001.
31. 4 laser with a semiconductor saturable absorber mirror," Opt. Lett., vol. 28, pp. 1829-1831, 2003.
32. 4, a new infrared laser material that is suitable for diode pumping," J. Opt. Soc. Amer. B, vol. 19, pp. 1794-1800, 2002.
33. 4 crystal," Opt. Lett., vol. 29, pp. 168-170, 2004.
34. S. Lecomte, R. Paschotta, S. Pawlik, B. Schmidt, K. Furusawa, A. Malinowski, D. J. Richardson, and U. Keller, "39-GHz repetition rate optical parametric oscillator in the 1.5-μm spectral region," Opt. Lett., to be published.