Interactions of argon cluster ion beams with silicon surfaces

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 232, Issue 1-4, 2005, Pages 206-211

  Takaoka, G H ^a   Shimatani, H ^a   Noguchi, H ^a   Kawashita, M ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Cluster ion beam; Irradiation damage; Molecular dynamic simulation; Rutherford backscattering spectrometry; Silicon surface

Indexed keywords

ACCELERATION; ARGON; COMPUTER SIMULATION; CRYSTALLINE MATERIALS; DEPOSITION; IRRADIATION; MOLECULAR DYNAMICS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; THRESHOLD VOLTAGE;

ACCELERATION VOLTAGES; CLUSTER ION BEAMS; IRRADIATION DAMAGE; MOLECULAR DYNAMIC SIMULATION;

ION BEAMS;

EID: 19944424133     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.03.046     Document Type: Conference Paper

References (8)

1. M.A. Duncan, and D.H. Rouvray Sci. Am. December 1989 110
2. I. Yamada, and G.H. Takaoka Jpn. J. Appl. Phys. 32 1993 2121
3. Z. Insepov, and I. Yamada Surf. Rev. Lett. 3 1996 1023
4. G.H. Takaoka, D. Yamazaki, and J. Matsuo Mater. Chem. Phys. 74 2002 104
5. T. Seki, J. Matsuo, G.H. Takaoka, and I. Yamada Nucl. Instr. and Meth. B 206 2003 902
6. T. Aoki, J. Matsuo, and G. Takaoka Nucl. Instr. and Meth. B 202 2003 278
7. F.H. Stillinger, and T.A. Weber Phys. Rev. B31 1985 5632
8. J.F. Ziegler, J.P. Biersack, and U. Littmark The Stopping and Range of Ions in Solids 1985 Pergamon Press New York, USA