Improved substrate current model for deep submicron MOSFETs

Solid-State Electronics

Volumn 44, Issue 11, 2000, Pages 1985-1988

  Li, Wei ^a   Yuan, Jiann S ^a   Chetlur, Sundar ^b   Zhou, Jonathan ^b   Oates, Anthony S ^b  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; SEMICONDUCTOR DEVICE MODELS; SUBSTRATES;

CIRCUIT AGING SIMULATIONS; SUBSTRATE CURRENT MODELS;

MOSFET DEVICES;

EID: 0034324047     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00170-2     Document Type: Article

References (7)

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3. BTA Technology Inc., BTABERT user's manual, May 1999.
4. Arora N.D., Sharma M.S. MOSFET substrate current model for circuit simulation. IEEE Trans Electron Dev. ED-38:1991;1392-1398.
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6. Okuto Y., Crowell C.R. Threshold energy effect on avalanche breakdown voltage in semiconductor junctions. Solid-State Electron. 18:1975;161-168.
7. Liu W, Jin X, Chen J, Jeng M, Liu Z, Cheng Y, Chen K, Chan M, Hui K, Huang J, Tu R, Ko P, Hu C. BSIM3V3.2.2 MOSFET model user's manual, 1999.