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Volumn 10, Issue 4, 2004, Pages 351-355
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Low-energy ion beam treatment of ̀-Al2O3(0001) and improvement of photoluminescence of ZnO thin films
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Author keywords
Al N, photoluminescence; Low energy ion beam; ZnO thin film; Al2O 3(0001)
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Indexed keywords
ALUMINA;
ALUMINUM OXIDE;
BINDING ENERGY;
CHEMICAL BONDS;
II-VI SEMICONDUCTORS;
ION BOMBARDMENT;
METALLIC FILMS;
OPTICAL FILMS;
OXIDE MINERALS;
PHOTOLUMINESCENCE;
PULSED LASER DEPOSITION;
SAPPHIRE;
SEMICONDUCTOR QUANTUM WELLS;
THIN FILMS;
WIDE BAND GAP SEMICONDUCTORS;
X RAY PHOTOELECTRON SPECTROSCOPY;
ZINC OXIDE;
CHEMICAL BONDINGS;
DEEP-LEVEL DEFECTS;
INTERFACIAL STRAIN;
ION FLUENCES;
LOW ENERGY ION BEAM;
SAPPHIRE SURFACE;
SUBSTRATE EFFECTS;
ZNO THIN FILM;
ION BEAMS;
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EID: 19944403864
PISSN: 15989623
EISSN: None
Source Type: Journal
DOI: 10.1007/BF03185984 Document Type: Article |
Times cited : (8)
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References (12)
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