메뉴 건너뛰기




Volumn 10, Issue 4, 2004, Pages 351-355

Low-energy ion beam treatment of ̀-Al2O3(0001) and improvement of photoluminescence of ZnO thin films

Author keywords

Al N, photoluminescence; Low energy ion beam; ZnO thin film; Al2O 3(0001)

Indexed keywords

ALUMINA; ALUMINUM OXIDE; BINDING ENERGY; CHEMICAL BONDS; II-VI SEMICONDUCTORS; ION BOMBARDMENT; METALLIC FILMS; OPTICAL FILMS; OXIDE MINERALS; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS; THIN FILMS; WIDE BAND GAP SEMICONDUCTORS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

EID: 19944403864     PISSN: 15989623     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF03185984     Document Type: Article
Times cited : (8)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.