Reduction of defects in GaN on reactive ion beam treated sapphire by annealing

Physica Status Solidi (B) Basic Research

Volumn 228, Issue 1, 2001, Pages 315-318

  Byun, D ^a   Jhin, J ^a   Cho, S ^a   Kim, J ^a   Lee, S J ^a   Hong, C H ^b   Kim, G ^c   Choi, W K ^c  

^a Korea University   (South Korea)

^b Chonbuk National University   (South Korea)

^c Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035541097     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200111)228:1<315::AID-PSSB315>3.0.CO;2-Z     Document Type: Article

References (6)

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3. D. BYUN, G. KIM, D. LIM, D. LEE, I.-H. CHOI, D. PARK, and D.-W. KUM, Thin Solid Films 289, 256 (1996).
4. H.-J. KIM, D. BYUN, G. KIM, and D.-W. KUM, J Appl. Phys. 87, 7940 (2000).
5. D. BYUN, H.-J. KIM, C.-H. HONG, C.-S. PARK, G. KIM, S.-K. KOH, W.-K. CHOI, and D.-W. KUM, phys. stat. sol. (a) 176, 643 (1999).
6. S. K. KOH, S. K. SONG, W. K. CHOI, H.-J. JUNG, and S. N. HAN, J. Mater. Res. 10, 2390 (1995).