Shear deformation and strain relaxation in HgCdTe on (211) CdZnTe

Journal of Electronic Materials

Volumn 29, Issue 6, 2000, Pages 804-808

  Lam, T T ^a   Moore, C D ^a   Forrest, R L ^a   Goorsky, M S ^a   Johnson, S M ^b   Leonard, D B ^b   Strand, T A ^b   Delyon, T J ^c   Gorwitz, M D ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b RAYTHEON COMPANY   (United States)

^c Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR GROWTH; SHEAR DEFORMATION; STRAIN; STRESS RELAXATION; X RAY CRYSTALLOGRAPHY;

CADMIUM ZINC TELLURIDE; LATTICE MISMATCHED; MERCURY CADMIUM TELLURIDE;

HETEROJUNCTIONS;

EID: 0033719938     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0228-8     Document Type: Article

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