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Volumn 4889, Issue 1, 2002, Pages 50-58

Process bias control with thin Cr film blanks for 90nm-node reticle fabrication

Author keywords

ArF lithography; Dry etching; Etching bias; Thin Cr film blanks

Indexed keywords

CHROMIUM; COMPUTER SIMULATION; DRY ETCHING; LITHOGRAPHY; METALLIC FILMS;

EID: 0037966884     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.467497     Document Type: Conference Paper
Times cited : (13)

References (5)
  • 2
    • 0035763964 scopus 로고    scopus 로고
    • Loading effect parameters of dry etcher system and their analysis in mask-to-mask loading and within mask loading
    • H. Kwon, D. Min, P. Jang, B. Chang, B. Choi, and S. Jeong, "Loading effect parameters of dry etcher system and their analysis in mask-to-mask loading and within mask loading", Proc. SPIE. 4562, pp. 79-87, 2001.
    • (2001) Proc. SPIE. , vol.4562 , pp. 79-87
    • Kwon, H.1    Min, D.2    Jang, P.3    Chang, B.4    Choi, B.5    Jeong, S.6
  • 4
    • 0035190002 scopus 로고    scopus 로고
    • Effect of clear field ratio on critical dimension on dry etching process
    • C. Lee, H. Bang, J. Choi, H. Jung, C. Shin and H. Kim, "Effect of Clear Field Ratio On Critical Dimension On Dry Etching Process", Proc. SPIE. 4409, pp. 396-400, 2001.
    • (2001) Proc. SPIE. , vol.4409 , pp. 396-400
    • Lee, C.1    Bang, H.2    Choi, J.3    Jung, H.4    Shin, C.5    Kim, H.6
  • 5
    • 0035185079 scopus 로고    scopus 로고
    • Development and characterization of a new plasma etching process for mask manufacturing
    • F. Erber, G. Ruhl, C. Ebi, R. Dietrich, J. Mathuni, and P. Nesladek, "Development and characterization of a new plasma etching process for mask manufacturing", Proc. SPIE. 4409, pp. 401-408, 2001.
    • (2001) Proc. SPIE. , vol.4409 , pp. 401-408
    • Erber, F.1    Ruhl, G.2    Ebi, C.3    Dietrich, R.4    Mathuni, J.5    Nesladek, P.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.