In-situ resistivity measurement of ZnS in diamond anvil cell Under high pressure

Chinese Physics Letters

Volumn 22, Issue 4, 2005, Pages 927-930

  Han, Yong Hao ^a   Luo, Ji Feng ^a   Hao, Ai Min ^a   Gao, Chun Xiao ^a   Xie, Hong Sen ^b   Qu, Sheng Chun ^c   Liu, Hong Wu ^a   Zou, Guang Tian ^a  

^a JILIN UNIVERSITY   (China)

^b INSTITUTE OF GEOCHEMISTRY   (China)

^c INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH PRESSURE ENGINEERING; II-VI SEMICONDUCTORS; INDIUM COMPOUNDS;

DIAMOND-ANVIL CELL; ELECTRIC CURRENT FIELDS; FIELD ANALYSIS; HIGH PRESSURE; MEASUREMENTS OF; METALLICS; PRESSURE-TEMPERATURE CONDITIONS; RESISTIVITY MEASUREMENT; SITU RESISTIVITY; ULTRA HIGH PRESSURE (UHP);

ZINC SULFIDE;

EID: 19844370597     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/22/4/041     Document Type: Article

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