Grain-size effect on pressure-induced semiconductor-to-metal transition in ZnS

Journal of Applied Physics

Volumn 86, Issue 11, 1999, Pages 6608-6610

  Jiang, J Z ^a   Gerward, L ^a   Frost, D ^b   Secco, R ^b   Peyronneau, J ^c   Olsen, J S ^d  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^b UNIVERSITÄT BAYREUTH   (Germany)

^c INSTITUT DE PHYSIQUE DU GLOBE DE PARIS   (France)

^d UNIVERSITY OF COPENHAGEN   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001431757     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371631     Document Type: Article

References (10)

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