Effect of Mg2+-dopant on the characteristics of lead titanate sensing membrane for ion-sensitive field-effect transistors

Sensors and Actuators, B: Chemical

Volumn 108, Issue 1-2 SPEC. ISS., 2005, Pages 883-887

  Jan, Shiun Sheng ^a   Chen, Ying Chung ^b   Chou, Jung Chuan ^c  

^a LING TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Drift; Hysteresis; ISFET; Lead titanate; Reduction rate

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; HYSTERESIS; ION SELECTIVE MEMBRANES; ION SENSITIVE FIELD EFFECT TRANSISTORS; LEAD COMPOUNDS; MAGNESIUM PRINTING PLATES; PH EFFECTS; POSITIVE IONS; REDUCTION; SOL-GELS;

DRIFT; LEAD TITANATE; LEAD TITANATE (PT) SENSING MEMBRANES; REDUCTION RATE;

PH SENSORS;

EID: 19744361989     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2004.12.033     Document Type: Conference Paper

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