A fully integrated high efficiency SiGe HBT class F power amplifier at 2.2 GHz

IEEE High Frequency Postgraduate Student Colloquium

Volumn 2003-January, Issue , 2003, Pages 48-51

  O'Sullivan, J A ^a,b   Delabie, C ^c   McCarthy, K G ^a,b   Murphy, A ^d   Murphy, P J ^a,b  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b Dept de Modelisation et Simulat Numerique   (France)

^c MOTOROLA   (Ireland)

^d NONE

Author keywords

BiCMOS integrated circuits; Consumer electronics; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; High power amplifiers; Power amplifiers; Radiofrequency amplifiers; Silicon germanium; Voltage

Indexed keywords

BICMOS TECHNOLOGY; CONSUMER ELECTRONICS; EFFICIENCY; ELECTRIC POTENTIAL; GALLIUM ALLOYS; GALLIUM ARSENIDE; GERMANIUM; GERMANIUM ALLOYS; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; RADIO FREQUENCY AMPLIFIERS; SILICON ALLOYS;

BI-CMOS PROCESS; BICMOS INTEGRATED CIRCUITS; CLASS F POWER AMPLIFIER; CONSTANT ENVELOPE MODULATIONS; FULLY INTEGRATED; GERMANIUM SILICON ALLOY; HIGH POWER AMPLIFIER; SILICON GERMANIUM;

POWER AMPLIFIERS;

EID: 19644362492     PISSN: 15466523     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/HFPSC.2003.1242304     Document Type: Conference Paper

References (6)

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