Broadband Terahertz Radiation Emitter Using Femtosecond-Laser-Irradiated n-Type InAs under Magnetic Field

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 2 A, 2004, Pages

  Takahashi, Hiroshi ^a   Hasselbeck, Michael P ^b   Quema, Alex ^c   Goto, Masahiro ^c   Ono, Shingo ^a,c   Sarukura, Nobuhiko ^a,c  

^a GRADUATE UNIVERSITY FOR ADVANCED STUDIES   (Japan)

^b UNIVERSITY OF NEW MEXICO   (United States)

^c INSTITUTE FOR MOLECULAR SCIENCE   (Japan)

Author keywords

Coherent plasmon; InAs; LO phonon; Semiconductor surface; Terahertz radiation

Indexed keywords

ARSENIC; COHERENT LIGHT; COUPLINGS; DAMPING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN BONDS; INDIUM ALLOYS; LASER BEAM EFFECTS; MAGNETIC FIELD EFFECTS; PHONONS; PHOTOCONDUCTIVITY; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

COHERENT PLASMON; LO PHONONS; SEMICONDUCTOR SURFACE; TERAHERTZ RADIATION;

LASER PULSES;

EID: 1942539352     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l221     Document Type: Article

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