Electric field dependence of drift velocity and electron temperature of GaAs/AlGaAs 2DEG in the low electric field region

Physica B: Condensed Matter

Volumn 348, Issue 1-4, 2004, Pages 272-279

  Ari, Mehmet ^a   Turkoglu, Orhan ^a  

^a ERCIYES UNIVERSITY   (Turkey)

Author keywords

2DEG; Electron temperature; Electron phonon interaction; GaAs

Indexed keywords

DEFORMATION; ELECTRIC FIELD EFFECTS; ELECTRONS; ENERGY DISSIPATION; HIGH ELECTRON MOBILITY TRANSISTORS; PIEZOELECTRICITY; VELOCITY MEASUREMENT;

ELECTRON TEMPERATURE; ELECTRON-PHONON INTERACTION; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 1942517376     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.12.002     Document Type: Article

References (30)

1. Ridley B.K. Rep. Prog. Phys. 54:1991;169.
2. Price P.J. Surf. Sci. 143:1984;145.
3. Daniels E.M., Ridley B.K., Emeny M. Solid-State Electron. 32:1989;1207.
4. Hirakawa K., Sakaki H. Appl. Phys. Lett. 49:1986;889.
5. Celik H., Cankurtaran M., Balkan N., Bayrakli A. Semicond. Sci. Technol. 17:2002;18.
6. Wigmore J.K., Erol M., Saharoui-Tahar M., Ari M., Wilkinson C.D.W., Davies J.H., Holland M., Stanley C. Semicond. Sci. Technol. 8:1993;322.
7. Cross A.J., Kent A.J., Lehmann D., Jasiukiewicz Cz., Henini M. Physica B. 263-264:1999;526.
8. Kent A.J., Strickland R.E., Strickland K.R., Cross A.J., Hawker P., Henini M. Semicond. Sci. Technol. 12:1997;849.
9. Hawker P., Kent A.J., Huges O.H., Challis L.J. Semicond. Sci. Technol. 17:1992;B29.
10. Lutz J., Kuchar F., Ismail K., Nickel H., Schlapp W. Semicond. Sci. Technol. 8:1993;399.
11. Ridley B.K. J. Phys. C: Solid Sate Phys. 15:1982;5899.
12. Lei X.L., Ting C.S. Phys. Rev. B. 32:1985;1112.
13. Price P.J. Phys. Rev. B. 30:1984;2236.
14. Price P.J. J. Appl. Phys. 53:1982;6863.
15. B.K. Ridley, Quantum Processes in Semiconductors, 2nd Edition, Clarendon Press, Oxford, 1988, p. 318 (Chapter 8).
16. Wigmore J.K., Erol M., Saharoui-Tahar M., Wilkinson C.D.W., Davies J.H., Stanley C. Semicond. Sci. Technol. 4:1991;837.
17. Leadley D.R., Nicholas R.J., Harris J.J., Foxon C.T. Semicond. Sci. Technol. 4:1989;879.
18. Shah J. Solid-State Electron. 32:1989;1051.
19. Balkan N., Gupta R., Ciechanowska Z., Ridley B.K., Peacock D., Jones G., Ritchie D., Frost J. Semicond. Sci. Technol. 6:1991;175.
20. Gupta R., Ridley B.K. Solid-State Electron. 32:1989;1241.
21. Ridley B.K. Semicond. Sci. Technol. 4:1989;1141.
22. Delagebeaudeuf D., Linh N.T. IEEE Trans. Electron Devices. 29:1982;955.
23. Ari M., Turkoglu O. Physica B. 337:2003;199.
24. Manion S.J., Artaki M., Emanuel M.A., Coleman J.J., Hess K. Phys. Rev. B. 35:1987;9203.
25. Lee H.J., Basinski L., Juravel L.Y., Wooley J.C. Can. J. Phys. 57:1979;233.
26. Lin W.Z., Schoelein R.W., Fujimoto J.G., Ippen E.P. J. Quantum Electron. 24:1988;267.
27. Tang C.L., Walmsley I.A., Wise F.W. Appl. Phys. Lett. 52:1988;850.
28. Balkan N., Arikan M.C., Gokden S., Tilak V., Schaff B., Shealy R.J. J. Phys.: Codens. Matter. 14:2002;3457.
29. Gokden S., Balkan N., Ridley B.K. Semicond. Sci. Technol. 18:2003;206.
30. Zakhleniuk N.A., Ridley B.K., Babiker M., Bennett C.R. Physica B. 272:1999;309.