Influence of the band-offset on the electronic temperature of GaAs/Al(Ga)As superlattice quantum cascade lasers

Semiconductor Science and Technology

Volumn 19, Issue 4 SPEC. ISS., 2004, Pages

  Spagnolo, Vincenzo ^a   Scamarcio, Gaetano ^a   Schrenk, Werner ^b   Strasser, Gottfried ^b  

^a POLITECNICO DI BARI   (Italy)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; ELECTRON ENERGY LEVELS; ELECTRONIC PROPERTIES; OPTICAL PROPERTIES; QUANTUM THEORY; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; SUPERLATTICES;

ELECTRON DISTRIBUTION; QUANTUM CASCADE LASERS;

SEMICONDUCTOR LASERS;

EID: 1942516911     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/4/040     Document Type: Conference Paper

References (8)

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