The Effects of Processing Conditions on the Thermal Conductivity of Polycrystalline Silicon Films

American Society of Mechanical Engineers, Electronic and Photonic Packaging, EPP

Volumn 3, Issue , 2003, Pages 455-459

  Graham, Samuel ^a   Olson, Brandon ^a   Wong, Channy ^a   Piekos, Edward ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; CONDUCTIVE FILMS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HEAT RESISTANCE; MICROELECTROMECHANICAL DEVICES; SILICON WAFERS; THERMAL CONDUCTIVITY; THERMOOXIDATION; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRICAL RESISTANCE THERMOMETRY; SILICON FILMS;

POLYSILICON;

EID: 1942504687     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1115/IMECE2003-42091     Document Type: Conference Paper

References (6)

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3. O. Paul, J. Korvink, and H. Baltes, "Determination of the thermal conductivity of CMOS IC polysilicon," Sensors and Actuators A, vol41-42, pp. 161-164, 1994.
4. F. Volklein and H. Baltes, "A microstructure for measurement of thermal conductivity of polysilicon thin films," Journal of Microelectricalmechanical Systems, vol. 1, pp. 193-196, 1992.
5. S. Uma, A. D. McConnell, M. Asheghi, K. Kurabayashi, and K. E. Goodson, "Temperature dependent thermal conductivity of undoped polycrystalline silicon," International Journal of Thermophysics, vol. 22, pp. 605-616, 2001.
6. A. D. McConnell, S. Uma, K. E. Goodson, "Thermal Conductivity of Doped Polysilicon Layers," Journal of Microelectricalmechanical Systems, vol. 10, pp. 360-369, 2001.