Controlling film growth with selective excitation: Chemical vapor deposition growth of silicon

Applied Physics Letters

Volumn 84, Issue 12, 2004, Pages 2175-2177

  Wu, Biao ^a,b   Cohen, Philip I ^c   Feldman, L C ^b,d   Zhang, Zhenyu ^b,e  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF MINNESOTA   (United States)

^d VANDERBILT UNIVERSITY   (United States)

^e UNIVERSITY OF TENNESSEE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADATOMS; INFRARED LASERS; SELECTIVELY ENHANCED ADATOM DIFFUSION (SEAD);

ADSORBENTS; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; DIFFUSION; ELECTRON MOBILITY; EPITAXIAL GROWTH; FREE ELECTRON LASERS; ISOTOPES; LOW TEMPERATURE EFFECTS; PROBABILITY; RADIATION EFFECTS; SILICON; SUBSTRATES; SURFACE ROUGHNESS; THIN FILMS;

FILM GROWTH;

EID: 1942444568     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1687452     Document Type: Article

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