Platinum and palladium high-temperature transducers on langasite

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

Volumn 52, Issue 4, 2005, Pages 545-549

  Thiele, Jeremy A ^a   Da Cunha, Mauricio Pereira ^a  

^a University of Maine   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH TEMPERATURE TRANSDUCERS; LANGASITE; RADIO FREQUENCY (RF) TESTS; THIN FILM INTERDIGITAL TRANSDUCERS (IDT);

ACOUSTIC SURFACE WAVE DEVICES; HIGH TEMPERATURE OPERATIONS; PALLADIUM; PHASE TRANSITIONS; PIEZOELECTRIC MATERIALS; SUBSTRATES;

ULTRASONIC TRANSDUCERS;

EID: 19344371900     PISSN: 08853010     EISSN: None     Source Type: Journal    
DOI: 10.1109/TUFFC.2005.1428035     Document Type: Article

References (24)

1. G. W. Hunter, P. G. Neudeck, C. C. Liu, B. Ward, Q. H. Wu, P. Dutta, M. Frank, J. Trimbol, M. Fulkerson, and B. Patton, "Development of chemical sensor arrays for harsh environments and aerospace applications," in Proc. IEEE Sensors, Jun. 2002, pp. 1126-1133.
2. G. W. Meetham and M. H. Van de Voorde, Material for High Temperature Engineering Applications. New York: Springer, 2000.
3. P. L. Dreike, D. M. Fleetwood, D. B. King, D. C. Sprauer, and T. E. Zipperian, "An overview of high-temperature electronic device technologies and potential applications," IEEE Trans. Comp. Package, Manufact. Technol. A, vol. 17, no. 4, pp. 594-609, 1994.
4. Y. Satoh, T. Nishihara, and O. Ikata, "SAW duplexer metallizations for high power durability," in Proc. IEEE Ultrason. Symp., 1998, pp. 17-26.
5. A. McNab, K. J. Kirk, and A. Cochran, "Ultrasonic transducers for high temperature applications," IEE Proc. Sci. Meas. Technol., vol. 145, no. 5, pp. 229-235, 1998.
6. National Materials Advisory Board, Materials for High-Temperature Semiconductor Devices. Washington, DC: National Academy Press, 1995.
7. S. Yoshida and J. Suzuki, "High-temperature reliability of GaN electronic devices," in Proc. Mater. Res. Soc. Symp., 2000, pp. W4.8.1-W4.8.7.
8. A. L. Spetz, A. Baranzahi, P. Tobias, and I. Lundstrom, "High temperature sensors based on metal-insulator-silicon carbide devices," Physica Status Solidi (A) Appl. Res., vol. 162, no. 1, pp. 493-511, July 1997.
9. 4," in Proc. IEEE Ultrason. Symp., 2002. pp. 949-952.
10. J. A. Kosinski, "New piezoelectric substrates for SAW devices," in Advances in SAW Technology, Systems and Application, vol. 2, C. W. Ruppel and T. A. Fjeldly, Eds. Singapore: World Sci. Publ., 2001, pp. 151-202.
11. M. Pereira da Cunha and D. C. Malocha, "Experimental and predicted SAW temperature behavior of langatate," in Proc. IEEE Ultrason. Symp., 2000, pp. 245-248.
12. J. Hornsteiner, E. Born, G. Fischerauer, and E. Riha, "Surface acoustic wave sensors for high temperature applications," in Proc. Annu. IEEE Int. Freq. Contr. Symp., 1998, pp. 615-620.
13. J. A. Thiele and M. Pereira da Cunha, "High temperature surface acoustic wave devices: Fabrication and characterization," Electron. Lett., vol. 39, pp. 818-819, May 15, 2003.
14. 3 and Pd sensing films," presented at Proc. IEEE Ultrason. Symp., Honolulu, HI, 2003.
15. R. Fachberger, E. Riha, E. Born, and P. Pongratz, "Homogeneity of langasite and langatate wafers for acoustic wave applications," presented at Proc. IEEE Ultrason. Symp., Honolulu, HI, 2003.
16. J. A. Thiele and M. Pereira da Cunha, "High temperature SAW gas sensor of langasite," presented at IEEE Sens. Conf., Toronto, Ontario, Canada, 2003.
17. H. She, H. L. Tuller, and H. Fritze, "Langasite for high-temperature acoustic wave gas sensors," Sens. Actuators B, vol. 93, pp. 169-174, 2003.
18. W. Buff, M. Minhack, S. Klett, M. Hamsch, R. Hoffmann, F. Krispel, and W. Wallnofer, "SAW resonators at high temperatures," presented at Proc. IEEE Ultrason. Symp., Honolulu, HI, 2003.
19. M. Pereira da Cunha and S. A. Fagundes, "Investigation on recent quartz-like materials for SAW applications," IEEE Trans. Ultrason., Ferroelect., Freq. Contr., vol. 46, pp. 1583-1590, Nov. 1999.
20. G. Fischerauer, A. Mauder, and R. Müller, "Acoustic wave devices," in Sensors, A Comprehensive Survey. W. Göpel, J. Hesse, and J. N. Zemel, Eds. Micro- and Nanosensor Technology/Trends in Sensors Markets, vol. 8, H. Meixner and R. Jones, Eds. Weinheim, Germany: VCH Publishing Group, 1995, pp. 135-180.
21. P. Neudeck, R. S. Okojie, and L. Chen, "High-temperature electronics - A role for wide bandgap semiconductors?," Proc. IEEE, vol. 90, June 2002.
22. G. Bernhardt, C. Silvestre, N. LeCursi, S. C. Moulzolf, D. J. Frankel, and R. J. Lad, "Performance of Zr and Ti adhesion layers for bonding of platinum metallization to sapphire substrates," Sens. Actuators B, vol. 77, pp. 368-374, 2001.
23. F. M. Smits, "Measurement of sheet resistivities with the four-point probe," Bell Syst. Technical J., vol. 37, pp. 711-718, 1958.
24. N. Jeon, W. Lin, M. K. Erhardt, G. S. Girolami, and R. G. Nuzzo, "Selective chemical vapor deposition of platinum and palladium directed by monolayers patterned using microcontact printing," Langmuir, vol. 13, pp. 3833-3838, July 9, 1997.