Local measurement of optically induced photocurrent in semiconductor structures

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5036, Issue , 2002, Pages 635-639

  Benešová, Markéta ^a   Dobis, Pavel ^a   Tománek, Pavel ^a   Uhdeová, Naděžda ^a  

^a BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

Author keywords

AlGaAs GaAs; Fabry Perot effect; Locally induced photocurrent; Scanning near field optical microscopy; Super resolution

Indexed keywords

DYE LASERS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; NEAR FIELD SCANNING OPTICAL MICROSCOPY; SAPPHIRE; SEMICONDUCTOR MATERIALS; TITANIUM; TUNING;

FABRY-PEROT EFFECT;

PHOTOCURRENTS;

EID: 19244385274     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.498656     Document Type: Conference Paper

References (6)

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3. J.P. Fillard, Near field optics and nanoscopy, World Scientific Publishing, Singapore, 1996.
4. P. Tománek, J. Brüstlová, P. Dobis, L. Grmela, "Hybrid STM/r-SNOM with novel probe", Ultramicroscopy, 71, pp. 199-203, 1998.
5. P. Létal, P. Tománek, P. Dobis, J. Brüstlová, L. Grmela, "Local spectroscopy by scanning near-field optical microscopy", Eng. Mech., 5, pp. 215-218, 1998.
6. P. Tománek, M. Benešová, D. Košt'álová, P. Létal, "Local optical characteritics of semiconductor surfaces", Proc. of SPIE, 4607, pp. 168-177, 2001.