Bias-dependent STM investigations of trimethylgallium adsorption on Si(001) at elevated temperatures

Applied Surface Science

Volumn 123-124, Issue , 1998, Pages 161-165

  Norenberg H ^a   Bowler, D R ^a   Briggs, G A D ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

Adsorptionholger.Norenberg materials.Ox.Ac.Uk; LEED; Silicon; STM; Surface reconstruction; TMGa

Indexed keywords

ADSORPTION; CRYSTAL DEFECTS; GALLIUM COMPOUNDS; LOW ENERGY ELECTRON DIFFRACTION; MATHEMATICAL MODELS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SURFACE PHENOMENA; SURFACE STRUCTURE;

SURFACE RECONSTRUCTION; TRIMETHYLGALLIUM;

SEMICONDUCTING SILICON;

EID: 19244376945     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00449-2     Document Type: Article

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