Identification of the Si(001) missing dimer defect structure by low bias voltage STM and LDA modelling

Surface Science

Volumn 341, Issue 3, 1995, Pages

  Owen, J H G ^a   Bowler, D R ^a   Goringe, C M ^a   Miki, K ^a   Briggs, G A D ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

Density functional calculations; Low index single crystal surfaces; Scanning tunneling microscopy; Semi empirical models and model calculations; Silicon; Surface defects; Surface electronic phenomena; Surface structure, morphology

Indexed keywords

CALCULATIONS; CRYSTAL DEFECTS; MATHEMATICAL MODELS; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SINGLE CRYSTALS; STRUCTURE (COMPOSITION); SURFACE PHENOMENA;

AB INITIO CALCULATIONS; BIAS VOLTAGES; DENSITY FUNCTIONAL CALCULATIONS; DIMER VACANCIES; LOW INDEX SINGLE CRYSTAL SURFACES; SEMI-EMPIRICAL MODELS; SURFACE DEFECTS; SURFACE ELECTRONIC PHENOMENA;

SURFACE STRUCTURE;

EID: 0029406674     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)00794-6     Document Type: Article

References (15)

1. Atomic and electronic contributions to Si(111)-(7×7) scanning-tunneling-microscopy images
2. Determination of the local electronic structure of atomic-sized defects on Si(001) by tunneling spectroscopy
3. Generating Transferable Tight-Binding Parameters: Application to Silicon